固态电子器件(英文影印版.第6版)

.2.2.2 atomic spectra 35
2.3 the bohr modlel 36
2.4 quantum mechanics 39
2.4.1 probability and the uncertainty principle 40
2.4.2 the schrodinger wave equation 41
2.4.3 potential well problem 44
2.4.4 tunneling 46
2.5 atomic structure and the periodic lable 47
2.5.1 the hydrogen atom 47
2.5.2 the periodic table 50
3 energy bands and charge carriers in semiconductors 61
3.1 bonding forces and energy bands in solids 61
3.1.1 bonding forces in solids 62
3.1.2 energy bands 64
3.1.3 metals, semiconductors, and insulators 67
3.1.4 direct and indirect semiconductors 68
3.1.5 variation of energy bands with alloy composition 71
3.2 charge carriers semiconductors
3.2.1 electrons and holes 73
3.2.2 effective mass 76
3.2.3 intrinsic material 80
3.2.4 extrinsic material 81
3.2.5 electrons and holes in quantum wells 85
3.3 carrier concentrations 86
3.3.1 the fermi level 86
3.3.2 electron and hole concentrations at equilibrium 89
3.3.3 temperature dependence of carrier concentrations 94
3.3.4 compensation and space charge neutrality 96
3.4 drift of carriers in electric and magnetic fields 98
3.4.1 conductivity and mobility' 98
3.4.2 drift and resistance 102
3.4.3 effects of lemperature and doping on mobility' 103
3.4.4 high-field effects 105
3.4 5 the hall effect 106
3.5 invariance of the fermi level at equilibrium 108
4 excess carriers in semiconductors 118
4.1 optical absorption 118
4.2 luminescence 121
4.2.1 photoluminescence 122
4.2.2 electroluminescence 124
4.3 carrier lifetime and photoconductivity 124
4.3.1 direct recombination of electrons and holes 125
4.3.2 indirect recombination; trapping 127
4.3.3 steady state carrier generation; quasi-fermi levels 130
4.3 4 photoconductive devices 132
4.4 diffusion of carriers 134
4.4.1 diffusion processes 134
4.4.2 diffusion and drift of carriers; built-in fields 137
4.4.3 diffusion and recombination; the continuity equation 14c
4.4.4 steady state carrier injection; diffusion length 141
4.4.5 the haynes-shockley experiment 144
4.4.6 gradients in the quasi-fermi levels 147
5 junctions 154
5.1 fabrication of p-n junctions 154
5.1.1 thermal oxidation 155
5.1.2 diffusion 156
5.1.3 rapid thermal processing 158
5.1.4 ion implantation 159
5.1.5 chemical vapor deposition (cvd) 162
5.1.6 photolithography 162
5.1.7 etching 166
5.1.8 metallization 167
5.2 equilibrium conditions 168
5.2.1 the contact potential 170
5.2.2 equilibrium fermi levels 174
5.2.3 space charge at a junction 175
5.3 forward-and reverse-biased junctions;steady state conditions 180
5.3.1 qualitative description of current flow at a junction 180
5.3.2 carrier injection 184
5.3.3 reverse bias 193
5.4 reverse-bias breakdown 196
5.4.1 zener breakdown 197
5.4.2 avalanche breakdown 198
5.4.3 rectifiers 200
5.4.4 the breakdown diode 204
5.5 transient and a-c conditions 205
5.5.1 time variation of stored charge 205
5.5.2 reverse recovery transient 208
5.5.3 switching diodes 211
5.5.4 capacitance of p-n junctions 212
5.5.5 the varactor diode 217
5.6 deviations from the simpl theory 218
5.6.1 effects of contact potential on carrier injection 219
5.6.2 recombination and generation in the transition region 221
5.6.3 ohmic losses 223
5.6.4 graded junctions 224
5.7 metal-semiconductor junctions 227
5.7.1 schottky barriers 227
5.7.2 rectifying contacts 229
5.7.3 ohmic contacts 231
5.7.4 typical schottky barriers 233
5.8 heterojunctions 234
6 field-effect transistors 251
6.1 transistor operation 252
6.1.1 the load line 252
6.1.2 amplification a4d switching 254
6.2 the junction fet 25
6.2.1 pinch-off and saturation 255
6.2.2 gate control 257
6.2.3 current-voltagecharacteristics 259
6.3 the metai-semiconductorfet 261..
6.3.1 the gaas mesfet 261
6.3.2 the high electron mobility transistor (hemt) 262
6.3.3 short channel effects 264
6.4 the metal-insulator-semiconductor fet 265
6.4.1 basic operation and fabrication 266
6.4.2 the ideal mos capacitor 270
6.4.3 effects of real surfaces 281
6.4.4 threshold voltage 284
6.4.5 mos capacitance-voltage analysis 286
6.4.6 time-dependent capacitance measurements 290
6.4.7 current-voltage characteristics of mos gate oxides 291
6.5 the mosfield-effect transistor 2
6.5.1 output characteristics 295
6.5.2 transfer characteristics 297
6.5.3 mobility models 300
6.5.4 short channel mosfet i-v characteristics 302
6.5.5 control of threshold voltage 303
6.5.6 substrate bias effects 309
6.5.7 subthreshold characteristics 311
6.5.8 equivalent circuit for the mosfet 313
6.5.9 mosfet scaling and hot electron effects 315
6.5.10 drain-induced barrier lowering 320
6.5.11 short channel effect and narrow width effect 322
6.5.12 gate-induced drain leakage 323
7 bipolar junction transistors 336
7.1 fundamentals o! bjt operation 336
7.2 amplification with bjts 340
7.3 bjtfabrication 343
7.4 minority carrier distributions and terminal currents 346
7.4.1 solution of the diffusion equation in the base region 347
7.4.2 evaluation of the terminal currents 349
7.4.3 approximations of the terminal currents 352
7.4.4 current transfer ratio 354
7.5 generalized biasing 355
7.5.1 the coupled-diode model 356
7.5.2 charge control analysis 361
7.6 switching 363
7.6.1 cutoff 364
7.6.2 saturation 365
7.6.3 the switching cycle 366
7.6.4 specifications for switching transistors 368
7.7 other important effects 368
7.7.1 drift in the base region 369
7.7.2 base narrowing 370
7.7.3 avalanche breakdown 372
7.7.4 injection level; thermal effects 373
7.7.5 base resistance and emitter crowding 374
7.7.6 gummei-poon model 376
7.7 7 kirk effect 380
7.8 frequency limitations of transistors 382
7.8.1 capacitance and charging times 382
7.8.2 transit time effects 385
7.8.3 webster effect 386
7.8.4 high-frequency transistors 386
7.9 heterojunction polar transistors 388
8 optoelectronic devices 398
8.1 photodiodes 398
8.1.1 current and voltage in an illuminated junction 399
8.1.2 solarcells 402
8.1.3 photodetectors 405
8.1.4 gain, bandwidth, and signal-to-noise ratio of photodetectors 407
8.2 light-emitting diodes 41 1
8.2.1 light-emitting materials 411
8.2.2 fiber-optic communications 414
8.3 lasers 417
8.4 semiconductor lasers 422
8.4.1 population inversion at a junction 422
8.4.2 emission spectra for p-n junction lasers 424
8.4.3 the basic semiconductor laser 426
8.4.4 heterojunction lasers 426
8.4.5 materials for semiconductor lasers 430
9 integrated circuits 437
9.1 background 438
9.1.1 advantages of integration 438
9.1.2 types of integrated circuits 440
9.2 evolution oflntegrated circuits 441
9.3 monolithic device elements 444
9.3.1 cmos process integration 444
9.3.2 silicon-on-insulator (sol) 459
9.3.3 integration of o.ther circuit elements 461
9.4 arge transfer devices 466
9.4.1 dynamic effects in mos capacitors 466
9.4.2 the basic ccd 468
9.4.3 improvements on the basic structure 469
9.4.4 app_lications of ccds 470
9.5 ultra largescalelntegration(ulsi) 470
9.5.1 logic devices 474
9.5.2 semiconductor memories 483
9.6 resting, bonding, and packaging 496
9.6.1 testing 497
9.6.2 wire bonding 497
9.6.3 flip-chip techniques 501
9.6.4 packaging 502
1o high-frequency and high-power devices 508
10.1 tunnel diodes 508
10.1.1degenerate semiconductors 509
10.2 the impatt diode 5
10.3 the gunn diode 515
10.3.1 the transferred-electron mechanism 515
10.3.2 formation and drift of space charge domains 51 8
10.4 the p-n-p-n diode 520
10.4.1 basic structure 520
10.4.2 the two-transistor analogy 521
10.4.3 variation of a with injection 522
10.4.4 forward-blocking state 523
10.4.5 conducting state 524
10.4.6 triggering mechanisms 525
10.5 the semiconductor-controlle rectifier 526
10.5.1 turning off the scr 527
10.6 insulated-gate bipolar transistor 528
appendices
i. definitions of commonly used symbols 535
ii. physical constants and conversion factors 539
iii. properties of semiconductor materials 540
iv. derivation of the density of states in the conduction band 541
v. derivation of fermi-dirac statistics 546
vi. dry and wet thermal oxide thickness grown on si(100) as a function of time and temperature 550
vii. solid solubilities of impurities in 552
vii. diffusivities of dopants in si and sio2 554
ix. projected range and straggle as function of implant energy in si 556
answers to selected self quiz questions 559
index 563...